2db1714 document number: ds31610 rev. 2 - 2 1 of 4 www.diodes.com december 2008 ? diodes incorporated 2db1714 new product low v ce(sat) pnp surface mo unt transistor features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? complementary npn type (2dd2679) available ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot89-3l ? case material: molded plasti c, "green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.072 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v peak pulse current i cm -4 a continuous collector current i c -2 a thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25c p d 0.9 w thermal resistance, junction to ambient air (note 3) @ t a = 25c r ja 139 c/w power dissipation (note 4) @ t a = 25c p d 2 w thermal resistance, junction to ambient air (note 4) @ t a = 25c r ja 62.5 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit conditions off characteristics collector-base breakdown voltage v ( br ) cbo -30 ? ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage (note 5) v ( br ) ceo -30 ? ? v i c = -1ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -6 ? ? v i e = -10 a, i c = 0 collector cut-off current i cbo ? ? -0.1 a v cb = -30v, i e = 0 emitter cut-off current i ebo ? ? -0.1 a v eb = -6v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce ( sat ) ? ? -370 mv i c = -1.5a, i b = -75ma dc current gain h fe 270 ? 680 ? v ce = -2v, i c = -200ma small signal characteristics output capacitance c obo ? 16 ? pf v cb = -10v, i e = 0, f = 1mhz current gain-bandwidth product f t ? 200 ? mhz v ce = -2v, i c = -100ma, f = 100mhz notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. 4. device mounted on fr-4 pcb with 1 inch 2 copper pad layout. 5. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. top view device schematic pin out configuration 3 1 2,4 c o l l e c t o r e m i t t e r b a s e 4 3 2 1 c c b e t o p v i e w
2db1714 document number: ds31610 rev. 2 - 2 2 of 4 www.diodes.com december 2008 ? diodes incorporated 2db1714 new product 0 0.4 0.8 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature a 1.2 1.6 2.0 0 0.001 0.01 0.1 1 10 -i , c o lle c t o r c u r r en t (a) c 0.1 1 10 100 -v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage (note 3) dc pw = 100ms pw = 10ms 0123 45 -v , collector-emitter voltage (v) ce fig. 3 typical collector current vs. collector-emitter voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 -i , c o lle c t o r c u r r e n t (a) c 1.4 i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 4 typical dc current gain vs. collector current 10 100 1,000 h, d c c u r r e n t g ai n fe t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 5 typical collector-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) 10 i/i = 20 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 6 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce
2db1714 document number: ds31610 rev. 2 - 2 3 of 4 www.diodes.com december 2008 ? diodes incorporated 2db1714 new product 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 7 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1. 2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 20 cb /i 0.1 1 10 100 v , reverse voltage (v) r fig. 8 typical capacitance characteristics 10 100 1,000 c a p a c i t a n c e (p f ) 1 c ibo c obo f = 1mhz 01020 30405060 708090100 i , collector current (ma) c fig. 9 typical gain-bandwidth product vs. collector current 1 10 100 1,000 f, g ai n -ba n dwid t h p r o d u c t (m h z) t v = -2v f = 100mhz ce 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 10 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 128c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
2db1714 document number: ds31610 rev. 2 - 2 4 of 4 www.diodes.com december 2008 ? diodes incorporated 2db1714 new product ordering information (note 6) part number case packaging 2DB1714-13 sot89-3l 2500/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot89-3l dim min max typ a 1.40 1.60 1.50 b 0.45 0.55 0.50 b1 0.37 0.47 0.42 c 0.35 0.43 0.38 d 4.40 4.60 4.50 d1 1.50 1.70 1.60 e 2.40 2.60 2.50 e ? ? 1.50 h 3.95 4.25 4.10 l 0.90 1.20 1.05 all dimensions in mm dimensions value (in mm) x1 1.7 x2 0.9 x3 0.4 y1 2.7 y2 1.3 y3 1.9 c 3.0 1714 = product type marking code yww = date code marking y = last digit of year (ex: 8 = 2008) ww = week code 01 - 52 e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 y1 x3 x2 x1 y3 y2 c 1714 yww
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